FGH50N3 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 300V, PT N-Channel IGBT

Package Marking and Ordering Information
Device Marking
FGH50N3
Device
FGH50N3
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BV_CES
BV_ECS
I_CES
I_GES
Collector to Emitter Breakdown Voltage I_CE = 250µA, V_GE = 0V
Emitter to Collector Breakdown Voltage I_EC = 10mA, V_GE = 0V
Collector to Emitter Leakage Current V_CE = 300V T_J = 25°C
T_J = 125°C
Gate to Emitter Leakage Current
V_GE = ± 20V
300V
-
-
V
15V
-
-
V
-
-
250 µA
-
-
2.0 mA
-
-
±250 nA
On State Characteristics
V_CE(SAT) Collector to Emitter Saturation Voltage I_CE= 30A
V_GE = 15V
T_J = 25°C
T_J = 125°C
-
1.30 1.4
V
-
1.25 1.4
V
Dynamic Characteristics
Q_G(ON) Gate Charge
V_GE(TH) Gate to Emitter Threshold Voltage
V_GEP Gate to Emitter Plateau Voltage
I_CE = 30A
V_CE = 150V
V_GE = 15V
V_GE = 20V
I_CE = 250µA, V_CE = V_GE
I_CE = 30A, V_CE = 150V
-
180
-
nC
-
228
-
nC
4.0 4.8 5.5
V
-
7.0
-
V
Switching Characteristics
SSOA Switching SOA
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON2
E_OFF
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON2
E_OFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
T_J = 150°C, R_G = 5Ω,
V_GE = 15V , L = 25µH,
Vce = 300V
150
-
-
A
IGBT and Diode at T_J = 25°C,
-
20
-
ns
I_CE = 30A,
-
15
-
ns
V_CE = 180V,
V_GE = 15V,
R_G = 5Ω,
L = 100µH,
-
135
-
ns
-
12
-
ns
-
130
-
µJ
Test Circuit - Figure 20
-
92
120
µJ
IGBT and Diode at T_J = 125°C, -
I_CE = 30A,
-
V_CE = 180V,
-
V_GE = 15V,
R_G = 5Ω,
-
L = 100µH,
-
Test Circuit - Figure 20
-
19
-
ns
13
-
ns
155 190
ns
7
15
ns
225 270
µJ
135 200
µJ
Thermal Characteristics
R_θJC Thermal Resistance Junction-Case TO-247
-
-
0.27 °C/W
NOTE:
1_T._{hEeOdNio2 dise}
the turn-on loss when a typical
type is specified in figure 20.
diode
is
used
in
the
test
circuit
and
the
diode
is
at
the
same
T_J
as
the
IGBT.
2_tJh._{EeTDuiErnnpC-uOStffptauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt} )tthhioseddpfeoofirinnMtewdeahasesurerthetemheienntcetogollrfeaPcl _{otoowfretchrueDrrienevsnittcaeenqTtauunarenls-oOuzefsfrSpoow(wIiCtecE}rhi=lnogs0sALos).tsaAsr.ltliTndhgeivsaictteetshstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A