FGH50N3 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 300V, PT N-Channel IGBT

Typical Performance Curves T_J = 25°C unless otherwise noted (Continued)
1.4
R_G = 5Ω, L = 100µH, V_CE = 180V
1.2
1.0
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
0.8
0.6
0.4
0.2
0
0
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
10
20
30
40
50
60
I_CE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
400
R_G = 5Ω, L = 100µH, V_CE = 180V
350
300
250
T_J = 125^oC, V_GE = 10V, V_GE = 15V
200
150
100
50
0
0
T_J = 25^oC, V_GE = 10V, V_GE = 15V
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
35
R_G = 5Ω, L = 100µH, V_CE = 180V
30
100
R_G = 5Ω, L = 100µH, V_CE = 180V
80
60
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
25
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
40
20
15
0
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
20
T_J = 25^oC, T_J = 125^oC, V_GE =15V
0
0
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
170
R_G = 5Ω, L = 100µH, V_CE = 180V
160
150
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
140
130
120
110
100
0
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
24
R_G = 5Ω, L = 100µH, V_CE = 180V
20
16
T_J = 25^oC, V_GE = 10V, 15V
12
8
T_J = 125^oC, V_GE = 10V, 15V
4
0
0
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A