FGA70N30T Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – 300V, 70A PDP IGBT

Typical Performance Characteristics (Continued)
Figure 13. Turn-on Characteristics vs.
Collector Current
500
Common Emitter
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
t_r
100
t_d(on)
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
t_f
t_d(off)
t_f
10
0
20
40
60
80
100
Collector Current, I_C [A]
Figure 15. Switching Loss vs. Gate Resistance
2000
1000
E_off
100
0
20
40
60
80
100
Collector Current, I_C [A]
Figure 16. Switching Loss vs. Collector Current
10000
1000
Common Emitter
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
100 ^Eon
10
0
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
100
E_on
E_off
10
0
20
40
60
80
100
Collector Current, I_C [A]
Figure 17. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
1E-3
1E-5
single pulse
1E-4
P_DM
t₁
t₂
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
5
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FGA70N30T Rev. A