FGA70N30T Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 300V, 70A PDP IGBT

FGA70N30T
300V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: V_CE(sat) =1.5V @ I_C = 40A
• High input impedance
• Fast switching
• RoHS complaint
Application
. PDP System
December 2007
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_{C pulse(1)*}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
G
E
Ratings
300
±30
160
201
90.6
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.62
40
Units
V
V
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2006 Fairchild Semiconductor Corporation
1
FGA70N30T Rev. A
www.fairchildsemi.com