FGA70N30T Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – 300V, 70A PDP IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
T_C = 25^oC
10V
20V
120
15V
12V
80
V_GE = 8V
40
Figure 2. Typical Output Characteristics
160
T_C = 125^oC
10V
120
20V
15V
12V
80
V_GE = 8V
40
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
160
Common Emitter
V_GE = 15V
T_C = 25^oC
120 _{TC = 125}o_C
80
40
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
160
Common Emitter
100 _{VCE = 20V}
T_C = 25^oC
T_C = 125^oC
10
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.4
Common Emitter
V_GE = 15V
2.0
70A
1.6
40A
1.2
I_C = 20A
0.8
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
1
2
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
40A
4
70A
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
3
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FGA70N30T Rev. A