FGA70N30T Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 300V, 70A PDP IGBT

Package Marking and Ordering Information
Device Marking
Device
FGA70N30T
FGA70N30TTU
Package
TO-3P
Packaging
Type
Tube
Electrical Characteristics T_C = 25^oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BV_CES
Collector-Emitter Breakdown Voltage
∆B_VCES/
∆T_J
I_CES
I_GES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V_GE = 0V, I_C = 250uA
V_GE = 0V, I_C = 250uA
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
On Characteristics
V_GE(th)
G-E Threshold Voltage
V_CE(sat)
Collector to Emitter
Saturation Voltage
I_C = 250uA, V_CE = V_GE
I_C =20A, V_GE = 15V
I_C =40A, V_GE = 15V
I_C =70A, V_GE = 15V
T_C = 25^oC
I_C = 70A, V_GE = 15V
T_C = 125^oC
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_CE = 30V_, V_GE = 0V
f = 1MHz
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V_CC = 200V, I_C = 40A
R_G = 15Ω, V_GE = 15V
Resistive Load, T_C = 25^oC
V_CC = 200V, I_C = 40A
R_G = 15Ω, V_GE = 15V
Resistive Load, T_C = 125^oC
V_CE = 200V, I_C = 40A
V_GE = 15V
Qty per Tube
30ea
Max Qty
per Box
-
Min. Typ. Max. Units
300
--
--
V
--
0.2
--
V/^oC
--
--
250
uA
--
--
± 400
nA
3.0
4.5
5.5
V
--
1.2
1.5
V
--
1.5
--
V
--
1.8
--
V
--
1.9
--
V
--
3000
--
pF
--
160
--
pF
--
110
--
pF
--
32
--
ns
--
90
--
ns
--
175
--
ns
--
170
300
ns
--
30
--
ns
--
90
--
ns
--
185
--
ns
--
235
--
ns
--
125
--
nC
--
25
--
nC
--
55
--
nC
2
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FGA70N30T Rev. A