FGA70N30T Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 300V, 70A PDP IGBT

Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T = 125^oC
C
16
12
8
40A
4
70A
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate Charge Characteristics
15
Common Emitter
T_C = 25^oC
12
100V
V_cc = 200V
9
6
3
0
0
30
60
90
120
150
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
300
Figure 8. Capacitance Characteristics
6000
5000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
4000
C_iss
3000
2000
1000
C_oss
C_rss
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
I_C MAX (Pulsed)
100
50µs
100µs
10
I_C MAX (Continuous)
1
1ms
10ms
Single Nonrepetitive
0.1 ^{Pulse TC = 25oC}
Curves must be derated
DC Operation
linearly with increase
in temperature
0.01
0.1
1
10
100 500
Collector - Emitter Voltage, V_CE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
3000
100
t_r
10
0
td(on)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
1000
t_f
100
t_d(off)
10
0
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
4
www.fairchildsemi.com
FGA70N30T Rev. A