FGA50N100BNT Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 1000V, 50A NPT-Trench IGBT CO-PAK

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
300
100
t_r
Figure 14. Turn-off Characteristics vs.
Gate Resistance
2000
1000
t_d(off)
10
10
t_d(on)
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 60A
T_C = 25^oC
T_C = 125^oC
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 15. Turn-on Characteristics vs.
Collector Current
200
100
10
10
t_f
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 60A
T_C = 25^oC
T_C = 125^oC
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 16. Turn-off Characteristics vs.
Collector Current
1000
100
t_r
t_d(on)
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
10
10 20 30 40 50 60 70 80 90 100
Collector Current, I_C [A]
Figure 17. Switching Loss vs. Gate Resistance
50
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 60A
T_C = 25^oC
10 ^{TC = 125oC}
E_on
E_off
1
10
20
30
40
50
Gate Resistance, R_G [Ω]
Common Emitter
V_GE = 15V, R_G = 10Ω
100 _{TC = 25}^o_C
T_C = 125^oC
t_d(off)
t_f
10
10 20 30 40 50 60 70 80 90 100
Collector Current, I_C [A]
Fig 18. Switching Loss vs. Collector Current
30
10
E_on
1
E_off
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 60A
T_C = 25^oC
T_C = 125^oC
0.1
10 20 30 40 50 60 70 80 90 100
Collector Current, I_C [A]
FGA50N100BNT Rev. A
5
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