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| FGA50N100BNT Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 1000V, 50A NPT-Trench IGBT CO-PAK | |||
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Package Marking and Ordering Information
Device Marking
Device
FGA50N100BNT FGA50N100BNTTU
Package
TO-3PN
Packaging
Type
Rail / Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 1mA
VCE = 1000V, VGE = 0V
VGE = ±25V, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 60mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 60A, VGE = 15V
IC = 60A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 10V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 60A,
RG = 10â¦, VGE = 15V,
Inductive Load, TC = 25oC
VCE = 600V, IC = 60A,
VGE = 15V, TC = 25oC
1000
-
-
V
-
-
1.0
mA
-
-
±500
nA
4.0
5.5
7.0
V
-
1.5
1.8
V
2.5
2.9
V
-
3.1
-
V
-
6000
-
pF
-
260
-
pF
-
200
-
pF
-
34
-
ns
-
68
-
ns
-
243
-
ns
-
65
100
ns
-
257
350
nC
-
45
-
nC
-
95
-
nC
FGA50N100BNT Rev. A
2
www.fairchildsemi.com
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