FGA50N100BNT Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 1000V, 50A NPT-Trench IGBT CO-PAK

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
60A
8
30A
90A
4
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
8000
6000
C_ies
4000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
2000
C_oes ^Cres
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
500
100
10µs
10
100µs
1ms
1
10 ms
*Notes:
DC
0.1 _{1. TC = 25}^o_C
2. T_J = 150^oC
3. Single Pulse
0.01
1
10
100
1000 3000
Collector-Emitter Voltage, V_CE [V]
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
60A
8
4
30A
90A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 200V
9
400V
600V
6
3
0
0
55
110
165
220
275
Gate Charge, Q_g [nC]
Figure 12. Load Current vs. Frequency
120
V_CC = 600V
load Current : peak of square wave
100
80
60
40
20 ^{Duty cycle : 50%}
T = 100^oC
C
Power Dissipation = 63W
0
10⁰
10¹
10²
10³
Frequency [kHz]
FGA50N100BNT Rev. A
4
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