FGA50N100BNT Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 1000V, 50A NPT-Trench IGBT CO-PAK

March 2009
FGA50N100BNT
tm
1000V, 50A NPT-Trench IGBT CO-PAK
Features
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.5 V @ I_C = 60A
• High Input Impedance
• RoHS Compliant
Applications
• UPS, PFC, I-H Jar, Induction Heater, Home Appliance.
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction and
switching characteristics as well as enhanced avalanche
ruggedness. These devices are well suited for UPS, PFC, I-H
Jar, induction Heater and Home Appliance.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
1000
± 25
50
35
200
156
63
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.8
40.0
Units
V
V
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FGA50N100BNT Rev. A
www.fairchildsemi.com