FGA50N100BNT Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 1000V, 50A NPT-Trench IGBT CO-PAK

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
T_C = 25^oC
20V
15V
10V
160
9V
120
80
8V
40
7V
V_GE = 6V
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
V_GE = 15V
160 _{TC = 25}^o_C
T_C = 125^oC
120
Figure 2. Typical Output Characteristics
200
T_C = 125^oC
160
20V
10V
15V
9V
120
8V
80
7V
40
V_GE = 6V
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
200
Common Emitter
V_CE = 20V
160 TC = 25^oC
T_C = 125^oC
120
80
80
40
40
0
01234567
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.5
Common Emitter
V_GE = 15V
90A
60A
3.0
30A
I_C = 10A
1.5
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
2
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
12
60A
8
30A
4
90A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGA50N100BNT Rev. A
3
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