FGA30S120P Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics VS.
Collector Current
2500 _{Common Emitter}
VGE = 15V, RG = 10Ω
1000 _{TC = 25oC}
t_r
T_C = 175^oC
100
t_d(on)
Figure 14.Turn-off Characteristics VS.
Collector Current
2500
1000
Common Emitter
VGE = 15V, RG = 10Ω
T_C = 25^oC
T_C = 175^oC
t_d(off)
t_f
10
20
40
60
Collector Current, I_C [A]
100
20
40
60
Collector Current, I_C [A]
Figure 15. Switching Loss VS. Gate Resistance
10
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 175^oC
Figure 16. Switching Loss VS. Collector Current
30k
Common Emitter
V_GE = 15V, R_G = 10Ω
10k _{TC = 25}o_C
T_C = 175^oC
{^Eoff
} ^E_on
1
0.5
0
10 20 30 40 50 60 70 80
Gate Resistance, R_G [Ω]
1k
{^Eoff
{^Eon
100
0 10 20 30 40 50 60 70
Collector Current, I_C [A]
Figure 17. Turn off Switching SOA Characteristics
100
Figure 18. Forward Characteristics
80
10
Safe Operating Area
V_GE = 15V, T_C = 175^oC
1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
10
1
0.5
0
T_J = 25^oC
T_J = 175^oC
T_C = 25^oC
T_C = 175^oC
1
2
Forward Voltage, V_F [V]
5
FGA30S120P Rev. C1
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