FGA30S120P Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FGA30S120P
FGA30S120P
TO-3PN
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
I_CES
I_GES
Collector Cut-Off Current
G-E Leakage Current
V_CE = 1300, V_GE = 0V
V_GE = V_GES, V_CE = 0V
On Characteristics
V_GE(th)
G-E Threshold Voltage
V_CE(sat) Collector to Emitter Saturation Voltage
V_FM
Diode Forward Voltage
I_C = 30mA, V_CE = V_GE
I_C = 30A, V_GE = 15V
T_C = 25^oC
I_C = 30A, V_GE = 15V,
T_C = 125^oC
I_C = 30A, V_GE = 15V,
T_C = 175^oC
I_F = 30A, T_C = 25^oC
I_F = 30A, T_C = 175^oC
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_CE = 30V_, V_GE = 0V,
f = 1MHz
Switching Characcteristics
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V_CC = 600V, I_C = 30A,
R_G = 10Ω, V_GE = 15V,
Resistive Load, T_C = 25^oC
V_CC = 600V, I_C = 30A,
R_G = 10Ω, V_GE = 15V,
Resistive Load, T_C = 175^oC
V_CE = 600V, I_C = 30A,
V_GE = 15V
-
-
1
mA
-
-
±500
nA
4.5
6.0
7.5
V
-
1.75
2.3
V
-
1.85
-
V
-
1.9
-
V
-
1.7
2.2
V
-
2.1
-
V
-
3345
-
pF
-
75
-
pF
-
60
-
pF
-
39
-
ns
-
360
-
ns
-
620
-
ns
-
160
210
ns
-
1.3
-
mJ
-
1.22
1.6
mJ
-
2.52
-
mJ
-
38
-
ns
-
375
-
ns
-
635
-
ns
-
270
-
ns
-
1.59
-
mJ
-
1.78
-
mJ
-
3.37
-
mJ
-
78
-
nC
-
4.2
-
nC
-
33.3
-
nC
2
FGA30S120P Rev. C1
www.fairchildsemi.com