FGA30S120P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

FGA30S120P
Shorted Anode^TM IGBT
Features
• High speed switching
• Low saturation voltage: V_CE(sat) =1.75V @ I_C = 30A
• High input impedance
• RoHS compliant
Applications
• Induction Heating and Microwave Oven
• Soft Switching Applications
October 2012
General Description
Using advanced Field Stop Trench and Shorted Anode technol-
ogy, Fairchild’s Shorted Anode^TM Trench IGBTs offer superior
conduction and switching performances, and easy parallel oper-
ation with exceptional avalanche capability. This device is
designed for induction heating and microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Description
V_CES
V_GES
I_C
I_{CM (1)}
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
I_F
Diode Continuous Forward Current
@ T_C = 25^oC
I_F
Diode Continuous Forward Current
@ T_C = 100^oC
P_D
Maximum Power Dissipation
Maximum Power Dissipation
@ T_C = 25^oC
@ T_C = 100^oC
T_J
Operating Junction Temperature
T_stg
Storage Temperature Range
T_L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Limited by Tjmax
G
E
Ratings
1300
±25
60
30
150
60
30
348
174
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.43
40
Units
V
V
A
A
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FGA30S120P Rev. C1
www.fairchildsemi.com