FGA30S120P Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
TC = 25^oC
20V 15V
12V
160
V_GE = 17V
10V
120
9V
80
8V
40
7V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteritics
200
Common Emitter
V_GE = 15V
160 _{TC = 25}^o_C
TC = 175^oC
120
80
40
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
V_GE = 15V
3.0
60A
2.5
2.0
30A
1.5
I_C = 15A
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
Figure 2. Typical Output Characteristics
200
TC = 175^oC
160
20V
VGE = 17V
15V
12V
120
10V
80
9V
8V
40
7V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
200
Common Emitter
V_CE = 20V
160 T_C = 25^oC
TC = 175^oC
120
80
40
0
0
1
2
3
4
5
6
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
T_C = 25^oC
16
12
8
30A
60A
4
I_C = 15A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
3
FGA30S120P Rev. C1
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