FGA30S120P Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
T_C = 175^oC
16
12
8
30A
4
60A
I_C = 15A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate Charge Characteristics
15
Common Emitter
T_C = 25^oC
12
400V
600V
V_CC = 200V
9
6
3
0
0
30
60
Gate Charge, Q_g [nC]
Figure 11. Turn-On Characteristics vs
Gate Resistance
500
t_r
100
20
10
t_d(on)
Common Emitter
VCC = 600V, VGE = 15V
I_C = 30A
T_C = 25^oC
T_C = 175^oC
20 30 40 50 60 70
Gate Resistance, RG [Ω]
Figure 8. Capacitance Characteristics
10000
C_ies
1000
C_oes
100
Common Emitter
C_res
V_GE = 0V, f = 1MHz
T_C = 25^oC
10
1
10
20 30
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteeristics
200
100
50µs
10
100µs
1ms
10 ms
1
DC
0.1
*Notes:
1. T_C = 25^oC
2. T_J = 170^oC
3. Single Pulse
0.01
1
10
100
1000 1200
Collector-Emitter Voltage, V_CE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
10000
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 175^oC
t_d(off)
1000
t_f
100
0
10 20 30 40 50 60 70
Gate Resistance, R_G [Ω]
4
FGA30S120P Rev. C1
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