English
Language : 

FR015L3EZ Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – Low-Side Reverse Bias / Reverse Polarity Protector
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Positive Bias Characteristics
RON
Device Resistance, Switch On
VON
∆VON / ∆TJ
IDIODE_CONT
Input Voltage, VIN, at which Voltage
at POS, VPOS, Reaches a Certain
Level at Given Current
Temperature Coefficient of VON
Continuous Diode Forward Current
VF
Diode Forward Voltage
IBIAS
Bias Current Flowing out of NEG
Pin during Normal Bias Operation
Negative Bias Characteristics
V- MAX_OP Reverse Bias Breakdown Voltage
∆V- MAX_OP / Reverse Bias Breakdown Voltage
∆TJ
Temperature Coefficient
I-
Leakage Current from NEG to POS
in Reverse-Bias Condition
tRN
Time to Respond to Negative Bias
Condition
Integrated TVS Performance
VZ
Breakdown Voltage @ IT
IR
Leakage Current from CTL to POS,
NEG is Open
Max Pulse
IPPM
Current from
CTL to POS
IEC61000-4-5
8x20µs pulse,
Clamping
NEG is Open
VC
Voltage form
CTL to POS
Dynamic Characteristics
CI
Input Capacitance between CTL
and NEG
CS
Switch Capacitance between POS
and NEG
CO
Output Capacitance between CTL
and POS
RC
Control Internal Resistance
Conditions
VIN = +1.7V, IIN = 1.5A
VIN = +2.1V, IIN = 1.5A
VIN = +3V, IIN = 1.5A
VIN = +5V, IIN = 1.5A
VIN = +3V, IIN = 1.5A,
TJ = 125°C
IIN = 100mA, VPOS = 50mV,
VNEG = 0V
VCTL = VPOS
VCTL = VPOS, IDIODE = 3A,
Pulse width < 300µs
VCTL = 8V, VNEG = 0V,
No Load
IIN = -250µA, VCTL = VPOS =0V
VNEG = 16V,
VCTL = VPOS = 0V
VNEG = 2.7V, VCTL = 0V,
CLOAD = 10µF, Reverse Bias
Startup Inrush Current = 0.2A
IT = 1mA
VCTL – VPOS = 8V
VCTL – VPOS = -8V
VCTL > VPOS
VCTL < VPOS
VCTL > VPOS
VCTL < VPOS
VIN = 3V, VNEG = VPOS = 0V,
f = 1MHz
Min.
0.7
0.65
12
Typ.
22
18
15
14
22
1.0
-1.7
0.80
16
13
2
-2
900
133
967
2
Max. Unit
30
25
20
mΩ
19
30
1.3
V
mV/°C
2
A
0.95 V
10
µA
-20
V
mV/°C
1
µA
50
ns
14.5 V
10
µA
-10
0.6
A
0.4
15.0
V
14.3
pF
Ω
© 2012 Fairchild Semiconductor Corporation
FR015L3EZ • Rev. A1
4
www.fairchildsemi.com