FR015L3EZ Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – Low-Side Reverse Bias / Reverse Polarity Protector

Absolute Maximum Ratings Values are at T_A=25°C unless otherwise noted.
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Unit
V+ _{MAX_OP}
Steady-State Normal Operating Voltage between CTL and NEG Pins
(V_IN = V+ _{MAX_OP}, I_IN = 1.5A, Switch On)
+8
V+ ₂₄
24-Hour Normal Operating Voltage Withstand Capability between CTL and
NEG Pins (V_IN = V+ ₂₄, I_IN = 1.5A, Switch On) ⁽¹⁾
12
V
V- _{MAX_OP}
Steady-State Reverse Bias Standoff Voltage between CTL and NEG Pins
(V_IN = V- _{MAX_OP})
-20
I_IN
Input Current
V_IN = 3V, Continuous⁽²⁾ (see Figure 4)
8
A
T_J
Operating Junction Temperature
P_D
Power Dissipation
T_A = 25°C⁽²⁾ (see Figure 4)
T_A = 25°C⁽²⁾ (see Figure 5)
150
°C
2.4
W
0.9
I_{DIODE_CONT} Steady-State Diode Continuous Forward Current from POS to NEG
I_{DIODE_PULSE} Pulsed Diode Forward Current from POS to NEG (300µs Pulse)
2
A
190
Human Body Model, JESD22-A114
2500
ESD
Charged Device Model, JESD22-C101
Electrostatic
Discharge
Capability
System Model,
IEC61000-4-2
POS is shorted to CTL
No external connection
between POS and CTL
Contact
Air
Contact
Air
2000
5000
V
7000
300
3000
Notes:
1. The V₊₂₄ rating is NOT a survival guarantee. It is a statistically calculated survivability reference point taken on
qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is
intended to indicate the device’s ability to withstand transient events that exceed the recommended operating
voltage rating. Specification is based on qualification devices tested using accelerated destructive testing at
higher voltages, as well as production pulse testing at the V₊₂₄ level. Production device field life results may vary.
Results are also subject to variation based on implementation, environmental considerations, and circuit
dynamics. Systems should never be designed with the intent to normally operate at V₊₂₄ levels. Contact Fairchild
Semiconductor for additional information.
2. The device power dissipation and thermal resistance (R_θ) are characterized with device mounted on the following
FR4 printed circuit boards, as shown in Figure 4 and Figure 5
Figure 4. 1 Square Inch of 2-ounce copper
Figure 5. Minimum Pads of 2-ounce Copper
Thermal Characteristics
Symbol
R_θJA
R_θJA
Parameter
Thermal Resistance, Junction to Ambient⁽²⁾ (see Figure 4)
Thermal Resistance, Junction to Ambient⁽²⁾ (see Figure 5)
Value
60
150
Unit
°C/W
© 2012 Fairchild Semiconductor Corporation
FR015L3EZ • Rev. A1
3
www.fairchildsemi.com