FGH30N6S2_01 Datasheet, PDF (2/11 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT

Package Marking and Ordering Information
Device Marking
30N6S2
30N6S2
30N6S2
Device
FGH30N6S2
FGP30N6S2
FGB30N6S2
Package
TO-247
TO-220AB
TO-263AB
Tape Width
-
-
24mm
Quantity
-
-
800
Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BV_CES Collector to Emitter Breakdown Voltage I_C = 250µA, V_GE = 0
600
BV_ECS Emitter to Collector Breakdown Voltage I_C = 10mA, V_GE = 0
10
I_CES Collector to Emitter Leakage Current V_CE = 600V T_J = 25°C
-
T_J = 125°C -
I_GES Gate to Emitter Leakage Current
V_GE = ± 20V
-
-
-
V
25
-
V
-
100
µA
-
2
mA
-
±250 nA
On State Characteristics
V_CE(SAT) Collector to Emitter Saturation Voltage I_C = 12A,
T_J = 25°C
-
V_GE = 15V
T_J = 125°C
-
2.0
2.5
V
1.7
2.0
V
Dynamic Characteristics
Q_G(ON) Gate Charge
V_GE(TH)
V_GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I_C = 12A,
V_GE = 15V
-
V_CE = 300V _{VGE = 20V}
-
23
29
nC
26
33
nC
I_C = 250µA, V_CE = 600V
3.5
4.3
5.0
V
I_C = 12A, V_CE = 300V
-
6.5
8.0
V
Switching Characteristics
SSOA Switching SOA
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
T_J = 150°C, R_G = 10Ω, V_GE = 60
-
15V, L = 100µH, V_CE = 600V
-
A
IGBT and Diode at T_J = 25°C, -
6
-
ns
I_CE = 12A,
-
10
-
ns
V_CE = 390V,
V_GE = 15V,
R_G = 10Ω
L = 200µH
-
40
-
ns
-
53
-
ns
-
55
-
µJ
Test Circuit - Figure 20
-
110
-
µJ
-
100 150
µJ
IGBT and Diode at T_J = 125°C -
I_CE = 12A,
-
V_CE = 390V,
-
V_GE = 15V,
R_G = 10Ω
-
L = 200µH
-
Test Circuit - Figure 20
-
11
-
ns
17
-
ns
73
100
ns
90
100
ns
55
-
µJ
160 200
µJ
-
250 350
µJ
Thermal Characteristics
R_θJC Thermal Resistance Junction-Case
-
-
0.75 °C/W
NOTE:
2_ao._{sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduOironNd-2}Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny0p.foicratlhdeiocdoenvisenuiseendceinotfhtehetecsitrccuirictuditeasnigdnethr.eEd_{OioNd1eisisthaet}
turn-on loss
the same T_J
3_tJh._{EeTDuiErnnpC-uOStfftpauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt} )tthhioseddpfeoofirinnMtewdeahasesuretrhetemheienntcetogollrfeaPcl _{otoowfretchrueDrrienevsnittcaeenqTtauunarenlso-OuzesffrpSoow(wIiCtecE}rhi=lnogs0sALso).tsaAsr.ltliTndhgeisvaitcteethsstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A