FGH30N6S2_01 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT

July 2001
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125^oC
• Low Gate Charge . . . . . . . . . 23nC at V_GE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Package
JEDEC STYLE TO-247 _E
JEDEC STYLE TO-220AB
C
G
EC _G
Symbol
JEDEC STYLE TO-263AB
C
C
G
E
G
E
Device Maximum Ratings T_C= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BV_CES Collector to Emitter Breakdown Voltage
600
V
I_C25
Collector Current Continuous, T_C = 25°C
45
A
I_C110
Collector Current Continuous, T_C = 110°C
20
A
I_CM
Collector Current Pulsed (Note 1)
108
A
V_GES
Gate to Emitter Voltage Continuous
±20
V
V_GEM Gate to Emitter Voltage Pulsed
±30
V
SSOA Switching Safe Operating Area at T_J = 150°C, Figure 2
60A at 600V
E_AS
Pulsed Avalanche Energy, I_CE = 20A, L = 1.3mH, V_DD = 50V
150
mJ
P_D
Power Dissipation Total T_C = 25°C
167
W
Power Dissipation Derating T_C > 25°C
1.33
W/°C
T_J
Operating Junction Temperature Range
-55 to 150
°C
T_STG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A