ES29LV320D Datasheet, PDF (41/59 Pages) Excel Semiconductor Inc. – 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

AC CHARACTERISTICS
EE SS II
Excel Semiconductor inc.
Table 16. Erase and Program Operations
Parameter
JEDEC Std.
t_AVAV
t_WC
t_AVWL
t_AS
t_ASO
t_WLAX
t_AH
t_AHT
t_DVWH
t_DS
t_WHDX
t_DH
t_OEPH
t_GHWL
t_GHWL
t_ELWL
t_CS
t_WHEH
t_CH
t_WLWH
t_WP
t_WHDL
t_WPH
t_SR/W
t_WHWH1
t_WHWH1
t_WHWH2
t_WHWH1
t_WHWH1
t_WHWH2
t_VCS
t_RB
t_BUSY
Description
Write Cycle Time (Note 1)
Min
Address Setup Time
Min
Address Setup Time to OE# low during toggle bit polling
Min
Address Hold Time
Min
Address Hold Time From CE# or OE# high during toggle bit polling Min
Data Setup Time
Min
Data Hold Time
Min
Output Enable High during toggle bit polling
Min
Read Recovery Time Before Write (OE# High to WE# Low)
Min
CE# Setup Time
Min
CE# Hold Time
Min
Write Pulse Width
Min
Write Pulse Width High
Min
Latency Between Read and Write Operations
Min
Byte
Typ
Programming Operation (Note 2)
Word
Typ
Accelerated Programming Operation, Word or Byte (Note 2)
Typ
Sector Erase Operation (Note 2)
Typ
Vcc Setup Time (Note 1)
Min
Write Recovery Time from RY/BY#
Min
Program/Erase Valid to RY/BY# Delay
Max
80R
80
45
45
35
90 120 Unit
90
120 ns
0
ns
15
ns
45
50 ns
0
ns
45
50 ns
0
ns
20
ns
0
ns
0
ns
0
ns
35
50 ns
30
ns
0
ns
9
us
11
8
us
0.7
sec
50
us
0
ns
90
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
ES29LV320D
41
Rev. 2D Jan 5, 2006