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ES29LV320D Datasheet, PDF (35/59 Pages) Excel Semiconductor Inc. – 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
EE SS II
Excel Semiconductor inc.
DC CHARACTERISTICS
Table 11. CMOS Compatible
Parameter
Symbol
ILI
Parameter Description
Input Load Current
ILIT
A9 Input Load Current
ILR
RESET# Input Load Current
ILO
Output Leakage Current
ICCI Vcc Active Read Current
(Notes 1,2)
ICC2
ICC3
ICC4
ICC5
VIL
VIH
VHH
VID
VOL
VOH1
VOH2
VLKO
Vcc Active Write Current (Note 2,3)
Vcc Standby Current (Note 2)
Vcc Reset Current (Note 2)
Automatic Sleep Mode
(Notes2,4)
Input Low Voltage
Input High Voltage
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
Voltage for Autoselect and
Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Low Vcc Lock-Out Voltage (Note 5)
Test Conditions
Min Typ Max
Unit
VIN=Vss to Vcc
Vcc=Vcc max
Vcc=Vcc max; A9=12.5V
Vcc=Vcc max; RESET#=12.5V
Vout=Vss to Vcc,
Vcc=Vcc max
5MHz
10
CE#=VIL OE#=VIH, Byte
1MHz
2
mode
CE#=VIL, OE#=VIH, Word
5MHz
10
mode
1MHz
2
CE#=VIL, OE#=VIH, WE#=VIL
15
CE#, RESET#= Vcc+0.3V
0.2
RESET#=Vss + 0.3V
0.2
VIH = Vcc + 0.3V
VIL = Vss + 0.3V
0.2
-0.5
0.7xVcc
+ 3.0
uA
35
uA
35
uA
+ 1.0
uA
16
4
mA
16
4
30
mA
10
uA
10
uA
10
uA
0.8
V
Vcc+0.3 V
Vcc = 3.0V + 10%
Vcc = 3.0V + 10%
IOL = 4.0 mA, Vcc = Vcc min
IOH = -2.0mA, Vcc = Vcc min
IOH = -100 uA, Vcc = Vcc min
11.5
11.5
0.85 Vcc
Vcc - 0.4
2.3
12.5
V
12.5
V
0.45
V
V
2.5
V
Notes:
1. The Icc current listed is typically less than 2 mA/MHz, with OE# at VIH , Typical condition : 25oC, Vcc = 3V
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Icc active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
ES29LV320D
35
Rev. 2D Jan 5, 2006