ES25P80 Datasheet, PDF (30/35 Pages) Excel Semiconductor Inc. – 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface

ADVANCED INFORMATION
EE SS II
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 8. AC Characteristics
Symbol
F_SCK
F_SCK
t_CRT
t_CFT
t_WH
t_WL
t_CS
t_CSS (Note 3)
t_CSH (Note 3)
t_HD (Note 3)
t_CD (Note 3)
t_HC
t_CH
t_V
t_HO
t_HD:DAT
t_SU:DAT
t_R
t_F
t_LZ (Note 3)
t_HZ (Note 3)
t_DIS (Note 3)
t_WPS (Note 3)
t_WPH (Note 3)
t_RES
t_DP
t_W
t_PP
t_SE
t_BE
t_PE
Description
SCK Clock Frequency READ instruction
SCK Clock Frequency for Fast Read
and all other instructions except Read
instruction
Clock Rise Time (Slew Rate)
Clock Fall Time (Slew Rate)
SCK High Time
SCK Low Time
CS# High Time
CS# Setup Time
CS# Hold Time
HOLD# Setup Time (relative to SCK)
HOLD# Hold Time (relative to SCK)
HOLD# Setup Time (relative to SCK)
HOLD# Hold Time (relative to SCK)
Output Valid
Output Hold Time
Data in Hold Time
Data in Setup Time
Input Rise Time
Input Fall Time
HOLD# to Output Low Z
HOLD# to Output High Z
Output Disable Time
Write Protect Setup Time
Write Protect Hold Time
Release DP Mode
CS# High to Deep Power Down Mode
Write Status Register Time
Page Programming Time
Sector Erase Time
Bulk Erase Time
Parameter Page Erase Time
Min
Typ
Max
Unit
D.C
40
MHz
D.C
75
MHz
0.1
V/ns
0.1
V/ns
6
ns
6
ns
100
ns
5
ns
5
ns
5
ns
5
ns
5
ns
5
ns
6
ns
0
ns
3
ns
3
ns
5
ns
5
ns
6
ns
6
ns
8
ns
15
ns
15
ns
3
us
3
us
5
ms
1.5 (Note 1) 3 (Note 2)
ms
0.5 (Note 1) 3 (Note 2)
sec
6 (Note 1) 12 (Note 2)
sec
20 (Note 1) 100 (Note 2)
ms
Notes:
1. Typical program and erase times assume the following conditions : 25’C, Vcc = 3.0V ; 10,000 cycles ; checkerboard data pattern
2. Under worst-case conditions of 90’C ; Vcc = 2.7V ; 100,000 cycles.
3. Not 100% tested.
ES25P80
30
Rev. 0D May, 11, 2006