ES25P80 Datasheet, PDF (1/35 Pages) Excel Semiconductor Inc. – 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface

ADVANCED INFORMATION
EE SS II
Excel Semiconductor inc.
ES25P80
8Mbit CMOS 3.0 Volt Flash Memory
with 75Mhz SPI Bus Interface
ARCHITECTURAL ADVANTAGES
• Single power supply operation
- 2.7V -3.6V for read and program operations
• Memory Architecture
- Sixteen sectors with 512 Kb each
• Program
- Page program ( up to 256 bytes) in 1.5ms (typical)
- Program cycles are on a page by page basis
• Erase
- 0.5s typical sector erase time
- 6s typical bulk erase time
• Endurance
- 100,000 cycles per sector (typical)
• Data Retention
- 20 years (typical)
• Parameter Page
- 256 Byte page independent from main memory
for parameter storage
- Seperate from array, erase time < 20ms
• Device ID
- JEDEC standard two-byte electronic signature
- RES instruction one-byte electronic signature for
backward compatibility
- Manufacturer and device type ID
• Process Technology
- Manufactured on 0.18um process technology
• Package Option
- Industry Standard Pinouts
- 8-pin SO (208mil) package
- All Pb-Free devices are RoHS Compliant
PERFORMANCE CHARACTERISTICS
• Speed
- 75Mhz clock rate (maximum)
• Power Saving Standby Mode
- Standby mode 50uA (max)
- Deep Power Down Mode 1uA (typical)
MEMORY PROTECTION FEATURES
• Memory Protection
- W# pin works in conjunction with Status Register Bits
to protect specified memory areas
- Status Register Block Protection Bits (BP2, BP1, BP0)
in status register configure parts of memory as read
only
SOFTWARE FEATURES
• SPI Bus Compatible Serial Interface
ES25P80
1
Rev. 0D May, 11, 2006