P0120009P Datasheet, PDF (8/13 Pages) Eudyna Devices Inc – 2W GaAs Power FET (Pb-Free Type)

P0120009P
2W GaAs Power FET (Pb-Free Type)
[Typical Performance]
KP029J Application Circuit
Vds=8V, Ids=400mA, Tc=25°C
Frequency characteristics were measured with Pout at 17dBm.
Technical Note
SUMITOMO ELECTRIC
Pout, Gain, IP3, Ids vs Pin
50
IP 3
45
40
35
Ids
30
25
20
Pout
15
Gain
10
-4 -2 0 2 4 6
Pin (dBm)
450
400
350
300
8250
IP3 vs Fre quency
48
Vds=8V
46
Vds=7V
44
42
40
Vds=6V
38
36
2100 2120 2140 2160 2180
Fre quency (MHz)
Gain vs Fre quency
13.4
13.3
Vds=7V
13.2
Vds=8V
13.1
Vds=6V
13.0
12.9
12.8
12.7
2100 2120 2140 2160 2180
Fre quency (MHz)
IM3, IM5 vs Pout
-40
-45
-50
-55
IM3
-60
-65
IM5
-70
10 12 14 16 18 20 22
Pout (dBm)
IP3 vs Fre quency
48
47
Ids=400mA
46
45
Ids=360mA
44
Ids=320mA
43
2100 2120 2140 2160 2180
Fre quency (MHz)
Gain vs Fre quency
13.3
Ids=400mA
13.2
Ids=320mA
13.1
Ids=360mA
13.0
12.9
12.8
2100 2120 2140 2160 2180
Fre quency (MHz)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
-8-