P0120009P Datasheet, PDF (4/13 Pages) Eudyna Devices Inc – 2W GaAs Power FET (Pb-Free Type)

P0120009P
2W GaAs Power FET (Pb-Free Type)
Technical Note
SUMITOMO ELECTRIC
Ids=400mA
80
60
IP3
40
Pout
20
Gain
0
ηadd
-20
IM3
-40
IM3 /Pou t
-60
-80
-100
-15 -10 -5 0 5 10 15 20 25
Pin (dBm)
Device : P0120009P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=400mA
Source Matching: Mag 0.74 Ang -156.6°
Load Matching: Mag 0.554 Ang –171.5°
Ids=350mA
80
60
IP3
40
20
Gain
Pout
0
ηadd
-20
IM3
-40
IM3 /Pou t
-60
-80
-100
-15 -10 -5 0 5 10 15 20 25
Pin (dBm)
Device : P0120009P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=350mA
Source Matching: Mag 0.74 Ang –156.6°
Load Matching: Mag 0.49 Ang –172.9°
[Note] P_out and η _add are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Pin
Pout
Gain
IM3
IM3/Pout
IP3
Id
Id=400mA _(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
-10.0
2.8
12.8
-72.9
-75.7
40.6
401.3
-5.0
7.8
12.8
-68.6
-76.3
45.7
397.0
0.0
12.7
12.7
-57.7
-70.3
47.8
387.4
5.0
17.7
12.7
-42.7
-60.3
47.8
370.0
10.0
22.9
12.9
-25.1
-48.0
46.6
343.7
15.0
27.7
12.7
2.7
-25.0
39.3
323.3
20.0
31.7
11.7
17.7
-14.0
35.2
367.9
ηadd
(%)
0.1
0.2
0.6
1.9
6.7
21.3
46.9
Pin
Pout
Gain
IM3
IM3/Pout
IP3
Id
ηadd
Id=350mA _(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
(%)
-10.0
2.2
12.2
-72.1
-74.3
39.4
346.7
0.1
-5.0
7.5
12.5
-67.7
-75.2
45.2
342.5
0.2
0.0
12.5
12.5
-57.6
-70.0
47.1
333.5
0.6
5.0
17.5
12.5
-42.7
-60.2
47.3
317.3
2.1
10.0
22.7
12.7
-23.9
-46.7
45.8
298.0
7.5
15.0
27.5
12.5
3.4
-24.2
38.5
289.5
23.1
20.0
31.6
11.6
20.9
-10.7
33.2
352.1
47.3
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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