P0120009P Datasheet, PDF (5/13 Pages) Eudyna Devices Inc – 2W GaAs Power FET (Pb-Free Type)

P0120009P
2W GaAs Power FET (Pb-Free Type)
Tc= 25°C, Vds=8V, Ids=400mA, Pin=5d Bm
Technical Note
SUMITOMO ELECTRIC
[Pout -Ls tate ]
f = 2.1GHz
Γ_pout : 0.54∠ 169.9
Source : 0.81∠ -155.1
Pout max : 17.65dBm
+j50
+j25
+j100
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.55∠ -171.5
Source : 0.74∠ -156.6
IP3 max : 50.7d Bm
+j50
+j100
16.4
17.65
25Ω
50Ω
100Ω
25Ω
50.7
50Ω
100Ω
-j25
-j100
-j50
Tc= 25°C, Vds=8V, Ids=350mA, Pin=5d Bm
[Pout -Ls tate ]
f = 2.1GHz
Γ_pout : 0.54∠ 169.9
Source : 0.81∠ -155.1
Pout max : 17.7d Bm
+j50
+j25
+j100
45.7
-j25
-j50
-j100
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.49∠ -172.9
Source : 0.74∠ -156.6
IP3 max : 50.55d Bm
+j50
+j100
17.7
25Ω
50Ω
100Ω
16.45
25Ω
50Ω
50.55
45.55
100Ω
-j25
-j100
-j50
-j25
-j100
-j50
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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