P0120009P Datasheet, PDF (1/13 Pages) Eudyna Devices Inc – 2W GaAs Power FET (Pb-Free Type)

P0120009P
2W GaAs Power FET (Pb-Free Type)
Technical Note
SUMITOMO ELECTRIC
♦Features
· Up to 2.7 GHz frequency band
· Beyond +31 dBm output power
· Up to +48dBm Output IP3
· High Drain Efficiency
· 11dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
♦Applications
· Wireless communication system
· Cellular, PCS, PHS, W-CDMA, WLAN
♦Description
P0120009P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
♦Electrical Specifications (@Tc=25°C)
Parameter
DC _{Saturated Drain Current}
Symbol
Idss
♦Functional Diagram
4
Pin No. Function
1
Input/Gate
2, 4
Ground
3 Output/Drain
♦Ordering Information
Part No
Description
P0120009P GaAs Power FET
KP029J
2.11-2.17GHz
Application Circuit
123
Number
of devices
1000
1
Container
7” Reel
Anti-static
Bag
♦Absolute Maximum Ratings (@Tc=25°C)
Parameter
Symbol Value Units
Drain-Source Voltage Vds
10
V
Gate-Source Voltage Vgs
-4
V
Drain Current
Ids
Idss
---
RF Input Power
(continuous)
Pin
23 ^(*)
dBm
Power Dissipation
Pt
Junction Temperature Tj
5.43
W
150 ^(**)
°C
Storage Temperature Tstg - 40 to +150 °C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
(**) Recommended Tj under operation is below 125°C.
Test Conditions
Vds=3V, Vg=0V
Values
Min. Typ. Max.
--- --- 1400
Units
mA
Transconductance
Pinchoff Voltage
gm
Vds=8V, Ids=400mA 450 --- --- mS
Vp
Vds=8V, Ids=50mA - 3.0 --- - 1.7 V
Gate-Source Breakdown Voltage
|Vgs0|
Igso= - 50µA
3.0 ---
---
V
Thermal Resistance
RF Frequency
Output Power
@ 1dB Gain Compression
Small Signal Gain
Output IP3
Power Added Efficiency
Rth
f
P1dB
G
IP3
η _add
Channel-Case
Vds=8V
Ids=400mA
f=2.1GHz
--- --- 22 °C/W
2.7 GHz
33 --- dBm
11 --- dB
--- 48 --- dBm
--- 57 --- %
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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