P0120009P Datasheet, PDF (6/13 Pages) Eudyna Devices Inc – 2W GaAs Power FET (Pb-Free Type)

P0120009P
2W GaAs Power FET (Pb-Free Type)
♦NF Characteristics
Ids=400mA
Ids=350mA
Technical Note
SUMITOMO ELECTRIC
Ids=300mA
-0.2
1.43
1.93
-0.4
3.0
45.0.0
10.0
3.0
45.0.0
10.0
3.0
45.0.0
10.0
-0.2
-0.4
1.36
1.86
-0.2
1.34
-0.4
1.84
[Note] The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C.
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.23
0.34
0.57
0.71
0.95
0.95
1.10
1.24
1.43
Γop t
M ag Ang(deg)
0.34 -64.4
0.28
-6.2
0.26
48.8
0.35
92.7
0.41 128.6
0.51 153.6
0.55 -178.1
0.58 -152.3
0.61 -124.6
Vds=8V
Rn/50
0.08
0.11
0.14
0.13
0.10
0.06
0.04
0.08
0.20
Ids=400mA
Associated
Gain(dB)
21.8
19.4
17.7
16.6
15.6
14.9
14.1
13.4
12.9
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.22
0.33
0.52
0.67
0.96
0.90
1.04
1.17
1.36
Γop t
M ag Ang(deg)
0.33 -73.8
0.25 -11.0
0.21
46.0
0.33
89.9
0.36 129.2
0.48 153.1
0.52 -179.2
0.57 -153.2
0.58 -124.8
Vds=8V
Rn/50
0.06
0.10
0.12
0.12
0.10
0.06
0.04
0.07
0.18
Ids=350mA
Associated
Gain(dB)
21.3
19.2
17.4
16.4
15.3
14.7
13.9
13.3
12.7
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.15
0.26
0.48
0.62
0.84
0.84
0.95
1.08
1.34
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0.5
Γop t
M ag Ang(deg)
0.33 -77.9
0.26 -17.4
0.19
39.7
0.30
86.8
0.34 126.2
0.45 151.0
0.50 179.4
0.54 -154.0
0.55 -123.9
Vds=8V
Rn/50
0.06
0.09
0.12
0.11
0.10
0.06
0.04
0.06
0.17
Ids=300mA
Associated
Gain(dB)
21.1
19.0
17.1
16.1
15.1
14.4
13.7
13.1
12.5
Ids=400mA
Ids=350mA
Ids=300mA
1.0
1.5
2.0
2.5
Frequency (GHz)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
-6-