P0120007P Datasheet, PDF (8/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120007P
250mW GaAs Power FET (Pb-Free Type)
[Typical Performance]
KP027J Application Circuit
Vds=8V, Ids=100mA, Tc=25°C
Frequency characteristics were measured with Pout at 13dBm.
Technical Note
SUMITOMO ELECTRIC
Pout, Gain, IP3, Ids vs Pin
45
40
IP 3
35
30
25
Ids
20
Gain
15
Pout
10
5
-10 -8 -6 -4 -2 0 2
Pin (dBm)
110
105
100
95
90
85
80
75
70
4
IM3, IM5 vs Pout
-30
-35
-40
-45
-50
-55
IM3
IM5
-60
-65
-70
6 8 10 12 14 16 18 20
Pout (dBm)
IP3 vs Fre quency
38.6
38.4
Vds=8V
38.2
38.0
37.8
37.6
Vds=7V
37.4
Vds=6V
37.2
2100 2120 2140 2160 2180
Fre quency (MHz)
39
38
37
36
35
34
33
32
31
2100
IP3 vs Fre quency
Ids=100mA
Ids=80mA
Ids=60mA
2120 2140 2160 2180
Fre quency (MHz)
Gain vs Fre quency
15.7
15.6
Vds=6V
Vds=7V
15.5
Vds=8V
15.4
15.3
15.2
15.1
2100 2120 2140 2160 2180
Fre quency (MHz)
Gain vs Fre quency
15.8
15.7
Ids=80mA
Ids=100mA
15.6
15.5
15.4
15.3
15.2
Ids=60mA
15.1
2100 2120 2140 2160 2180
Fre quency (MHz)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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