P0120007P Datasheet, PDF (6/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120007P
250mW GaAs Power FET (Pb-Free Type)
♦NF Characteristics
Ids=100mA
Ids=80mA
Technical Note
SUMITOMO ELECTRIC
Ids=60mA
1.26
-0.2
-0.4
1.76
3.0
45.0.0
10.0
1.20
-0.2
-0.4
1.70
3.0
4.0
5.0
10.0
1.06
-0.2
-0.4
1.56
3.0
4.0
5.0
10.0
[Note] The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C.
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.17
0.22
0.37
0.44
0.68
0.73
0.85
1.04
1.26
Γop t
M ag Ang(deg)
0.70 -96.6
0.64 -67.5
0.58 -35.8
0.57
-0.6
0.49
30.4
0.52
64.9
0.51
97.5
0.50 129.5
0.45 163.8
Vds=8V
Rn/50
0.14
0.22
0.27
0.33
0.31
0.25
0.19
0.11
0.07
Ids=100mA
Associated
Gain(dB)
23.8
21.7
20.3
19.6
18.3
17.7
17.1
16.4
15.9
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.42
0.46
0.55
0.61
0.78
0.80
0.88
1.00
1.20
Γop t
M ag Ang(deg)
0.70 -98.3
0.64 -69.0
0.58 -39.2
0.54
-4.8
0.49
25.7
0.50
59.3
0.49
91.1
0.48 123.2
0.43 157.5
Vds=8V
Rn/50
0.14
0.21
0.27
0.27
0.32
0.25
0.19
0.12
0.08
Ids=80mA
Associated
Gain(dB)
23.9
21.8
20.3
19.4
18.3
17.6
16.9
16.3
16.0
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.41
0.41
0.50
0.53
0.69
0.70
0.77
0.85
1.06
Γop t
M ag Ang(deg)
0.69 -100.2
0.65 -70.8
0.58 -42.0
0.54
-7.8
0.47
21.1
0.50
54.7
0.49
87.0
0.47 117.6
0.41 152.9
Vds=8V
Rn/50
0.13
0.19
0.25
0.25
0.30
0.23
0.18
0.11
0.07
Ids=60mA
Associated
Gain(dB)
23.5
21.5
19.9
19.1
18.0
17.2
16.6
15.9
15.7
2.0
1.8
1.6
1.4
Ids=100mA
1.2
Ids=80mA
1.0
Ids=60mA
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.5
2.0
2.5
Frequency (GHz)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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