P0120007P Datasheet, PDF (4/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120007P
Technical Note
250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC
Ids=100mA
80
60
40
20
Pout
0
-20
-40
IP3
Gain
ηadd
IM3
IM3 /Pou t
-60
-80
-100
-20 -15 -10 -5
0
5 10 15
Pin (dBm)
Device: P0120007P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=100mA
Source Matching: Mag 0.68 Ang 133.9°
Load Matching: Mag 0.37 Ang 91.1°
Ids=80mA
80
60
40
20
Pout
0
-20
-40
IP3
Gain
ηadd
IM3
IM3 /Pou t
-60
-80
-100
-20 -15 -10 -5 0 5 10 15
Pin (dBm)
Device : P0120007P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=80mA
Source Matching: Mag 0.68 Ang 133.9°
Load Matching: Mag 0.54 Ang 77.8°
[Note] P_out and η _add are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Pin
Pout
Gain
IM3 IM3/Pout
IP3
Id
ηadd
Id=100mA _(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
(%)
-15.0
1.2
16.2
-68.1
-69.3
35.9
97.8
0.2
-10.0
6.3
16.3
-59.2
-65.5
39.0
95.3
0.5
-5.0
11.4
16.4
-47.5
-58.8
40.8
91.7
1.8
0.0
16.4
16.4
-32.8
-49.2
41.0
88.2
6.0
5.0
21.4
16.4
0.1
-21.3
30.7
85.1
19.8
10.0
25.1
15.1
13.8
-11.3
27.1
93.3
41.9
Pin
Pout
Gain
IM3 IM3/Pout
IP3
Id
ηadd
Id=80mA
(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
(%)
-15.0
0.7
15.7
-67.8
-68.5
34.9
78.9
0.2
-10.0
5.9
15.9
-60.3
-66.2
39.0
76.1
0.6
-5.0
11.0
16.0
-48.9
-59.8
40.9
72.6
2.1
0.0
16.1
16.1
-27.3
-43.3
37.7
69.9
7.0
5.0
21.0
16.0
1.5
-19.5
29.1
65.0
23.6
10.0
24.4
14.4
12.4
-12.0
27.2
69.6
47.8
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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