P0120007P Datasheet, PDF (7/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120007P
Technical Note
250mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC
♦Application Circuit : 2110-2170MHz
R2 C4
C1
Z5
RF in (Rs=50Ω)
Z1
Z2
C2
Z3
D.U.T
Z4
L1
L2
L3
C6
R1
C3
C5
RF out (RL=50Ω)
Z6
Z7
L4
L5
Vg
KP027J
RF in
C1
C5
L3
C2
L1 L2 R1
R2
L4
C4 _C6
L5
C3
Vg
(-0.7~-2V)
Vd
(+8V)
20
S21
10
0
S11
-10
-20
S12
-30
1.9
2.0
2.1
Frequency (GHz)
S22
2.2
Vd
RF out
Ref. Des.
R1
R2
C1
C2
C3
C4
C5
C6
L1
L2
L3
L4
L5
Value
82Ω
470Ω
0.5pF
0.75pF
0.1µF
0.5pF
6pF
0.1µF
3.3nH
3.3nH
18nH
18nH
2.7nH
Part Number
SUSUMU
RR0816 series
MURATA
GRM18 series
TOKO LL1608
series
Ref.
Electrical length
Designator
@ 2.1GHz (deg)
Z1
5.9
Z2
5.44
Z3
4.08
Z4
13.61
Z5
8.62
Z6
6.38
Z7
3.63
2.3
All microstrip lines have a line impedance of 50_Ω.
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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