P0120007P Datasheet, PDF (5/13 Pages) Eudyna Devices Inc – 250mW GaAs Power FET (Pb-Free Type)

P0120007P
250mW GaAs Power FET (Pb-Free Type)
Tc= 25°C, Vds=8V, Ids=100mA, Pin=-5dBm
Technical Note
SUMITOMO ELECTRIC
[Pout -Ls tate ]
f = 2.1GHz
Γ_pout : 0.61∠ 92.7
Source : 0.65∠ 154.2
Pout max : 13.7d Bm
+j50
+j25
+j100
12.45
13.7
[ IP3- Ls tate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ_IP3 : 0.37∠ 91.1
Source : 0.68∠ 133.9
IP3 max : 40.4d Bm
+j50
+j25
39.15
+j100
40.4
25Ω
50Ω
100Ω
25Ω
50Ω
100Ω
-j25
-j100
-j50
Tc=25°C, Vds=8V, Ids=80mA, Pin=-5dBm
[Pout -Ls tate ]
f = 2.1GHz
Γ_pout : 0.63∠ 94.2
Source : 0.65∠ 154.2
Pout max : 13.7d Bm
+j25
12.45
+j50
13.7
+j100
25Ω
50Ω
100Ω
-j25
-j100
-j50
[ IP3- Ls tate]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.54∠ 77.8
Source : 0.68∠ 133.9
IP3 max : 40.55d Bm
+j50
40.55
+j100
38.05
25Ω
50Ω
100Ω
-j25
-j100
-j50
-j25
-j100
-j50
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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