AT45DQ161 Datasheet, PDF (72/81 Pages) List of Unclassifed Manufacturers – 16-Mbit DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support

Figure 26-2. Algorithm for Programming or Re-programming of the Entire Array Randomly
START
Provide Address of
Page to Modify
Main Memory Page
to Buffer Transfer
(53h, 55h)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
Main Memory Page Program
through Buffer
(82h, 85h)
Buffer Write
(84h, 87h)
Buffer to Main
Memory Page Program
(83h, 86h)
(2)
Auto Page Rewrite
(58h, 59h)
Increment Page
(2)
Address Pointer
END
Notes: 1. To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within
every 20,000 cumulative page erase and program operations
2. A page address pointer must be maintained to indicate which page is to be rewritten. The auto page rewrite
command must use the address specified by the page address pointer
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to
wait until 20,000 cumulative page erase and program operations have accumulated before rewriting all
pages of the sector. See application note AN-4 (“Using Adesto’s Serial DataFlash”) for more details
AT45DQ161 [PRELIMINARY DATASHEET] 72
8790B–DFLASH–10/2013