M02139 Datasheet, PDF (17/18 Pages) M/A-COM Technology Solutions, Inc. – 1G/10G Gbps TIA with AGC and Rate Select

5.0 Die Specification
Figure 5-1. Bare Die Layout
2
1
14
13
12 11
VCC
AGC _DOUT NC
GND
3 _PINK
4 _PINA
VCC
MON DOUT
NC
5
6
7
8
GND
9 10
Pad
Number
1
2 ⁽¹⁾
3
4
5
6
7
Pad
AGC
V_CC
PINK
PINA
V_CC
MON
DOUT
X
Y
-126
338
-278
338
-493
124
-493
-124
-278
-338
-126
-338
26
-338
NOTES:
1. It is only necessary to bond one V_CC pad and one GND pad.
However, bonding more GND pads is encouraged for improved
performance in noisy environments.
2. Each location is an acceptable bonding location.
3. Leave floating.
Pad
Number
8 ⁽³⁾
9 ^{(1, 2)}
10 ^{(1, 2)}
11^{(1, 2)}
12^{(1, 2)}
13^{(1, 2)}
14
Pad
NC
GND
GND
GND
GND
GND
DOUT
X
Y
178
-338
325
-338
426
-338
426
338
325
338
178
338
26
338
Process technology: Silicon-Germanium, Silicon Nitride
passivation
Die thickness: 300 µm
Pad metallization: Aluminum
Die size: 1242 µm x 932 µm
Pad openings: 72 µm sq.
Pad Centers in µm referenced to center of device
Connect backside bias to ground
02139-DSH-001-D
Mindspeed Technologies^®
17
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