OXFW900-TQ-A Datasheet, PDF (7/30 Pages) List of Unclassifed Manufacturers – IEEE1394 to ATA/ATAPI Native Bridge

OXFORD SEMICONDUCTOR LTD.
Configuration & Operation
4 OPERATING CONDITIONS
OXFW900
Symbol
VDD
VIN
IIN
TSTG
Parameter
DC supply voltage
DC input voltage
DC input current
Storage temperature
Min
-0.3
-0.3
-40
Table 2: Absolute maximum ratings
Symbol
VDD
VBB
TC
Parameter
Min
DC supply voltage
3.0
5V PMOS bulk bias
4.75
Temperature
0
Table 3: Recommended operating conditions
5 DC ELECTRICAL CHARACTERISTICS
Max
4.6
VDD + 0.3
+/- 10
125
Units
V
V
mA
°C
Max
Units
3.6
V
5.25
V
70
°C
5.1 I/O Buffers
Symbol
VDD
VIH
Parameter
Supply voltage
Input high voltage
V_IL
Input low voltage
CIL
Cap of input buffers
COL Cap of output buffers
IIH
Input high leakage current
IIL
Input low leakage current
VOH Output high voltage
VOH Output high voltage
VOL Output low voltage
VOL Output low voltage
IOZ
3-state output leakage current
Condition
Commercial
CMOS Interface
CMOS Schmitt trig
CMOS Interface ¹
CMOS Schmitt trig
Vin = VDD
Vin = VSS
IOH = -1 µA
IOH = -1mA to –24mA
IOL = 1 µA
IOL = 1mA to 24mA
Symbol
ICC
Parameter
Condition
Operating supply current in
normal mode
Operating supply current in
Power-down mode
Min
3.0
0.7 x Vdd
2.1
-10
-10
VDD – 0.05
2.4
-10
Max
3.6
0.3 x Vdd
0.8
5.0
10.0
10
10
0.05
0.4
10
Typical
Max
Units
V
V
V
pF
pF
µA
µA
V
V
V
V
µA
Units
mA
Table 4: Characteristics of OXFW900 I/O buffers
Data Sheet Revision 1.0
Page 7