SKM100GB125DN Datasheet, PDF (5/6 Pages) List of Unclassifed Manufacturers – SEMITRANSR M Ultra Fast IGBT Modules

SKM 100 GB 125 DN
1
K/W
0,1
M100G125 - 19
1
K/W
0,1
M100G125 - 20
0,01
0,001
Z_thJC
single pulse
D=0,50
0,20
0,10
0,05
0,02
0,01
0,01
0,001
Z_thJC
single pulse
D=0,5
0,2
0,1
0,05
0,02
0,01
0,0001
0,00001 0,0001 0,001 0,01
t_p
0,1
1
s
0,0001
0,00001 0,0001 0,001 0,01
t_p
0,1
1
s
Fig. 19 Transient thermal impedance of IGBT
Z_thJC = f (t_p); D = t_p / t_c = t_p · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z_thjc = f (t_p); D = t_p / t_c = t_p · f
M100G125 - 22
M100G125 - 23
120
V_CC = 600 V
120
V_CC = 600 V
A
T_j = 125 °C
A
T_j = 125 °C
R_G=
V_GE = ± 15 V
6Ω
R_G= 6 Ω
V_GE = ± 15 V
I_F = 75 A
80
80
40
I_RR
0
0 IF
40
9Ω
12 Ω
20 Ω
60 Ω
80
A 120
9Ω
12 Ω
40
20 Ω
60 Ω
I_RR
0
0 _diF/dt
2500
A/us 5000
Fig. 22 Typ. CAL diode peak reverse recovery
current I_RR = f (I_F; R_G)
Fig. 23 Typ. CAL diode peak reverse recovery
current I_RR = f (di/dt)
20
uC
15
9Ω
12 Ω
20 Ω
60
10 ^Ω
M100G125 - 24
RG= 6Ω _IF=
100 A
75 A
56 A
V_CC = 600 V
T_j = 125 °C
V_GE = ± 15 V
38 A
19 A
5
Q_rr
0
0
di_F/dt
2500 A/us
5000
Fig. 24 Typ. CAL diode recovered charge Q_rr = f (di/dt)
© by SEMIKRON
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