SKM100GB125DN Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – SEMITRANSR M Ultra Fast IGBT Modules

SKM 100 GB 125 DN
Absolute Maximum Ratings
Symbol Conditions ¹⁾
V_CES
V_CGR
I_C
I_CM
V_GES
P_tot
T_j, (T_stg)
V_isol
humidity
climate
R_GE = 20 kΩ
T_case = 25/80 °C
T_case = 25/80 °C; t_p = 1 ms
per IGBT, T_case = 25 °C
AC, 1 min.
IEC 60721-3-3
IEC 68 T.1
Inverse Diode
I_F = –I_C T_case = 25/80 °C
I_FM = –I_CM T_case = 25/80 °C; t_p = 1 ms
I_FSM
t_p = 10 ms; sin.; T_j = 150 °C
I²t
t_p = 10 ms; T_j = 150 °C
Characteristics
Symbol Conditions ¹⁾
V_(BR)CES
V_GE(th)
I_CES
I_GES
V_CEsat
V_CEsat
g_fs
V_GE = 0, I_C = 4 mA
V_GE = V_CE, I_C = 2 mA
V_GE = 0
T_j = 25 °C
V_CE = V_CES T_j = 125 °C
V_GE = 20 V, V_CE = 0
I_C = 75 A V_GE = 15 V;
I_C = 100 A T_j = 25 °C
V_CE = 20 V, I_C = 75 A
C_CHC
C_ies
C_oes
C_res
L_CE
per IGBT
V_GE = 0
V_CE = 25 V
f = 1 MHz
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
V_CC = 600 V
V_GE = –15 V / +15 V ³⁾
I_C = 75 A, ind. load
R_Gon = R_Goff = 8 Ω
T_j = 125 °C
Inverse Diode ⁸⁾
V_F = V_EC I_F = 75 A V_GE = 0 V;
V_F = V_EC I_F = 100 A T_j = 25 (125) °C
V_TO
T_j = 125 °C
r_t
T_j = 125 °C
I_RRM
I_F = 75 A; T_j = 25 (125) °C ²⁾
Q_rr
I_F = 75 A; T_j = 25 (125) °C ²⁾
Thermal characteristics
R_thjc
R_thjc
R_thch
per IGBT
per diode
per module
Values
1200
1200
100 / 80
200 / 160
± 20
690
–40 ... + 150 (125)
2500
class 3K7/IE32
40/125/56
95 / 65
200 / 160
720
2600
Units
V
V
A
A
V
W
°C
V
SEMITRANS^® M
Ultra Fast IGBT Modules
SKM 100 GB 125 DN
A
A
A
A²s
SEMITRANS 2N (low inductance)
min. typ.
≥ V_CES
4,5
5,5
0,1
6
3,3
3,8
31
5
720
380
80
40
360
20
9
3,5
max.
6,5
1,5
300
3,65
350
6,6
900
500
25
Units
V
V
mA
mA
nA
V
V
S
pF
nF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
2,0(1,8)
2,5
V
2,25(2,05)
V
1,2
V
12
15
mΩ
27(40)
A
3(10)
µC
0,18 °C/W
0,50 °C/W
0,05 °C/W
GB
Features
• N channel, homogeneous Si
• Low inductance case
• Short tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * I_cnom
• Fast & soft inverse CAL diodes ⁸⁾
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology
• Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
• Switched mode power supplies
at f_sw > 20 kHz
• Resonant inverters up to
100 kHz
• Inductive heating
• Electronic welders at
f_sw > 20 kHz
1) _{Tcase = 25 °C, unless otherwise}
specified
2) _{IF = – IC, VR = 600 V,}
–di_F/dt = 800 A/µs, V_GE = 0 V
3) _{Use VGEoff = –5... –15 V}
8) _{CAL = Controlled Axial Lifetime}
Technology
© by SEMIKRON
000831
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