SKM100GB125DN Datasheet, PDF (2/6 Pages) List of Unclassifed Manufacturers – SEMITRANSR M Ultra Fast IGBT Modules

SKM 100 GB 125 DN
800
W
600
M100G125 - 1
400
200
P_tot
0
0 20 40 60 80 100 120 140 160
T_C
°C
Fig. 1 Rated power dissipation P_tot = f (T_C)
30
mWs
20
M100G125 - 2
E_on
T_j = 125 °C
V_CE = 600 V
V_GE = + 15 V
R_G = 12 Ω
10
E_off
E
0
0I_C 20
40
60
80 100 120
A
Fig. 2 Turn-on /-off energy = f (I_C)
40
mWs
30
M100G125 - 3
T_j = 125 °C ¹⁰⁰⁰
V_CE = 600 V
V_GE = + 15 V ^A
I_C = 75 A
100
E_on
M100G125 - 4
1 pulse
T_C = 25 °C
t_p=
T_j ≤ 150 °C
10µs
100µs
20
10
E_off
E
0
0 _RG
20
40
60
80
Ω
Fig. 3 Turn-on /-off energy = f (R_G)
10
1ms
1
10ms
Not for
linear use
I_C
0,1
1
10
V_CE
100
1000
10000
V
Fig. 4 Maximum safe operating area (SOA) I_C = f (V_CE)
M100G125 - 5
2,5
T_j ≤ 150 °C ¹²
M100G125 - 6
T_j ≤ 150 °C
V_GE = 15 V
2
R_Goff = 12 Ω ₁₀
I_C = 75 A
V_GE = ± 15 V
t_sc ≤ 10 µs
L < 25 nH
di/dt=1000 A/µs
8
3000 A/µs
I_C = 75 A
1,5
5000 A/µs
1
0,5
I_Cpuls/I_C
0
0 _VCE200
400
600
800 1000 1200 1400
V
Fig. 5 Turn-off safe operating area (RBSOA)
6
allowed numbers of
4
short circuits: <1000
2
I_CSC/I_C
time between short
circuits: >1s
0
0 200 400 600 800 1000 1200 1400
V_CE
V
Fig. 6 Safe operating area at short circuit I_C = f (V_CE)
B 6 – 38
000831
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