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SKM100GB125DN Datasheet, PDF (3/6 Pages) List of Unclassifed Manufacturers – SEMITRANSR M Ultra Fast IGBT Modules
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SKM 100 GB 125 DN
150
A
100
M100G125 - 8
Tj = 150 °C
VGE ≥ 15V
50
IC
0
0 20 40 60 80 100 120 140 160
TC
°C
Fig. 8 Rated current vs. temperature IC = f (TC)
160
A
140
17V
15V
120
13V
11V
100
9V
7V
80
M100G125 - 9
60
40
20
IC
0
0
1
2
3
4
5
6
VCE
V
Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C
Pcond(t) = VCEsat(t) · IC(t)
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)
VCE(TO)(Tj) ≤ 1,4 + 0,003 (Tj –25) [V]
typ.: rCE(Tj) = 0,0253 + 0,000067 (Tj –25) [Ω]
max.: rCE(Tj) = 0,0307 + 0,00004 (Tj –25) [Ω]
valid
for
VGE
=
+
15
+2
–1
[V]; IC > 0,3 ICnom
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
© by SEMIKRON
160
A
140
17V
120
15V
13V
100
11V
9V
80
7V
M100G125 - 10
60
40
20
IC
0
0
1
2
3
4
5
6
VCE
V
Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C
150
A
M100G125 - 12
100
50
IC
0
0 VG 2
4
6
8
10
12
V
Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V
000831
B 6 – 39
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