SKM100GB125DN Datasheet, PDF (4/6 Pages) List of Unclassifed Manufacturers – SEMITRANSR M Ultra Fast IGBT Modules

SKM 100 GB 125 DN
20
V
18
16
M100G125 - 13
100
I_Cpuls = 75 A
nF
600
14
800V
10
12
10
8
6
1
4
V_GE ²
0
0 _QGate 200
400
600
800
nC
C
0,1
0
10
V_CE
M100G125.XLS-14
C_ies
C_oes
C_res
20
30
V
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V_CE
V_GE = 0 V
f = 1 MHz
1000
ns
100
M100G125 - 15
t_doff
t_don
T_j = 125 °C ¹⁰⁰⁰⁰
V_CE = 600 V
V_GE = ± 15 V ^ns
R_Gon = 12 Ω
R_Goff = 12 Ω
induct. load
1000
M100G125 - 16
t_doff
T_j = 125 °C
V_CE = 600 V
V_GE = ± 15 V
I_C = 75 A
induct. load
t_don
t_r
100
t_r
t
t_f
10
0
20 40 60 80 100 120
I_C
A
Fig. 15 Typ. switching times vs. I_C
t
t_f
10
0
20
40
60
80
R_G
Ω
Fig. 16 Typ. switching times vs. gate resistor R_G
100
A
80
60
40
T_j=125°C, typ.
T_j=25°C, typ.
T_j=125°C, max.
T_j=25°C, max.
M100G125.XLS-17
20
I_F
0
0
1
V_F
2
3
V
Fig. 17 Typ. CAL diode forward characteristic
B 6 – 40
M100G125 - 18
6
V_CC = 600 V
mJ
5
R_G=
6Ω
T_j = 125 °C
V_GE = ± 15 V
9Ω
4
12 Ω
20 Ω
3
2
60 Ω
1
E_offD
0
0 IF
50
100
A 150
Fig. 18 Diode turn-off energy dissipation per pulse
000831
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