GS820E32T Datasheet, PDF(10/23 Page) List of Unclassifed Manufacturers

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GS820E32T Datasheet, PDF (10/23 Pages) List of Unclassifed Manufacturers – 2M Synchronous Burst SRAM

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GS820E32T/Q-150/138/133/117/100/66

Undershoot Measurement and Timing

VIH

VSS

50%

VSS-2.0V

20% tKC

Overshoot Measurement and Timing

VDD+-2.0V

50%

20% tKC

VDD

VIL

Capacitance

(TA=25oC, f=1MHZ, VDD=3.3V)

Parameter

Control Input Capacitance

Input Capacitance

Output Capacitance

Note: This parameter is sample tested.

Symbol

CIN

COUT

Test conditions

VDD=3.3V

VIN=0V

VOUT=0V

Typ. Max. Unit

Package Thermal Characteristics

Rating

Layer Board Symbol TQFP Max QFP Max Unit Notes

Junction to Ambient (at 200 lfm)

single

RÎJA

TBD

Â°C/W 1,2,4

Junction to Ambient (at 200 lfm)

four

RÎJA

TBD

Â°C/W 1,2,4

Junction to Case (TOP)

RÎJC

TBD

Â°C/W

3,4

Notes:

1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-

ature air flow, board density, and PCB thermal resistance.

2. SCMI G-38-87.

3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.

Rev: 1.03 2/2000

10/23

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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