M12S128324A Datasheet, PDF (4/46 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 32 Bit x 4 Banks Synchronous DRAM

ESMT
M12S128324A
PIN
DQM0~3
DQ0 ~ DQ31
VDD / VSS
VDDQ / VSSQ
N.C
NAME
Data Input / Output Mask
Data Input / Output
Power Supply / Ground
Data Output Power / Ground
No Connection
INPUT FUNCTION
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active.
Data inputs / outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 3.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C )
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
Min
Typ
VDD, VDDQ
2.375
2.5
(for -6)
V_DD, V_DDQ
2.3
2.5
VIH
0.8xVDDQ
2.5
VIL
-0.3
0
VOH
VDDQ -0.2
-
VOL
-
-
ILI
-2
-
Max
2.625
2.7
VDDQ+0.3
0.3
-
0.2
2
Unit
V
V
V
V
V
V
μA
Note:
1. Under all conditions, V_DDQ must be less than or equal to V_DD.
2. VIH(max) = 3.0V AC. The overshoot voltage duration is ≤ 3ns.
3. VIL(min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.
4. Any input 0V ≤ V_IN ≤ VDDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled , 0V ≤ VOUT ≤ VDDQ.
Note
1
1
2
3
IOH = -0.1mA
IOL = 0.1mA
4
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
4/46