M12S128324A Datasheet, PDF (19/46 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 32 Bit x 4 Banks Synchronous DRAM

ESMT
4. CAS Interrupt (II) : Read Interrupted by Write & DQM
( a) CL =2 , B L= 4
CLK
i)CMD
DQM
DQ
ii)CMD
DQM
DQ
iii)CMD
DQM
DQ
iv)CMD
DQM
DQ
RD WR
D0 D1 D2 D3
RD
WR
Hi-Z
D0
D1 D2 D3
RD
WR
Hi-Z
D0 D1 D2 D3
RD
WR
HHi -i -ZZ
Q0
D0 D1 D2 D3
*Note1
M12S128324A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 1.4
19/46