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EN29LV010 Datasheet, PDF (9/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV010
COMMAND DEFINITIONS
The operations of the EN29LV010 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 5. EN29LV010 Command Definitions
Command
Sequence
Read
Reset
Bus Cycles
1st
2nd
3rd
4th
5th
6th
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Add Data Add Data Add Data Add Data Add Data Add Data
1 RA RD
1 Xxx F0
Manufacturer ID
4 555 AA 2AA 55 555 90 100 1C
Device ID
4 555 AA 2AA 55 555 90 X01 6E
Sector Protect Verify
4 555 AA 2AA 55
555 90
(SA) 00/
X02 01
Program
4 555 AA 2AA 55 555 A0 PA PD
Unlock Bypass
Unlock Bypass Program
Unlock Bypass Reset
Chip Erase
3 555 AA 2AA 55 555 20
2 XXX A0 PA PD
2 XXX 90 XXX 00
6 555 AA 2AA 55 555 80
555 AA
2AA 55
Sector Erase
Erase Suspend
Erase Resume
6 555 AA 2AA 55
1 xxx B0
1 xxx 30
555 80
555 AA
2AA 55
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A16-A14 uniquely select any Sector.
555 10
SA 30
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array
data using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors, the device outputs status data. After completing a programming operation in the
Erase Suspend mode, the system may once again read array data with the same exception.
This Data Sheet may be revised by subsequent versions
9
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2004/01/05