EN29LV010 Datasheet, PDF (25/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

EN29LV010
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Limits
Typ
Max
Unit
Comments
0.5
10
sec
Excludes 00H programming prior
4
80
sec
to erasure
Byte Programming Time
8
Chip Programming Time
Erase/Program Endurance
1
100K
300
µs
Excludes system level overhead
3
sec
cycles
Minimum 100K cycles
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to V_ss on all pins except I/O pins
(including A9 and OE )
Input voltage with respect to V_ss on all I/O Pins
Vcc Current
Min
-1.0 V
-1.0 V
-100 mA
Max
12.0 V
Vcc + 1.0 V
100 mA
Note : These are latch up characteristics and the device should never be put under these conditions. Refer to Absolute
Maximum ratings for the actual operating limits.
Table 13. DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
This Data Sheet may be revised by subsequent versions ₂₅ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/01/05