EN29LV010 Datasheet, PDF (20/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Table 7. DC Characteristics
(T_a = 0°C to 70°C or - 40°C to 85°C; V_CC = 2.7-3.6V)
EN29LV010
Symbol
Parameter
Test Conditions
Min
Typ ^{Max Unit}
I_LI
I_LO
I_CC1
Input Leakage Current
Output Leakage Current
Supply Current (read) TTL
(read) CMOS
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE# = V_IL; OE# = V_IH;
f = 5MHz
±1
µA
±1
µA
8
14
mA
7
12
mA
I_CC2
Supply Current (Standby - TTL)
Supply Current (Standby - CMOS)
CE# = V_IH,
CE# = Vcc ± 0.3V
0.4
1.0
mA
1
5.0
µA
I_CC3
Byte program, Sector or
Supply Current (Program or Erase) _{Chip Erase in progress}
15
30
mA
I_CC4
V_IL
V_IH
V_OL
V_OH
V_ID
I_ID
V_LKO
Automatic Sleep Mode
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
V_IH = Vcc ± 0.3 V
V_IL = Vss ± 0.3 V
I_OL = 4.0 mA
I_OH = -2.0 mA
I_OH = -100 µA,
A9 = V_ID
1
5.0
µA
-0.5
0.7 x
Vcc
0.85 x
Vcc
Vcc -
0.4V
10.5
0.8
V
Vcc ±
0.3
V
0.45
V
V
V
11.5
V
100
µA
2.3
2.5
V
This Data Sheet may be revised by subsequent versions ₂₀ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/01/05