EN29LV010 Datasheet, PDF (21/35 Pages) Eon Silicon Solution Inc. – 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Test Conditions
Device Under Test
C_L
EN29LV010
3.3 V
2.7 kΩ
6.2 kΩ
Note: Diodes are IN3064 or equivalent
Test Specifications
Test Conditions
Output Load
Output Load Capacitance, C_L
Input Rise and Fall times
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
-45R
-55
-70
-90
Unit
1 TTL Gate
30
30
100
100
pF
5
5
5
5
ns
0.0-3.0 0.0-3.0 0.0-3.0 0.0-3.0
V
1.5
1.5
1.5
1.5
V
1.5
1.5
1.5
1.5
V
This Data Sheet may be revised by subsequent versions ₂₁ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/01/05